C2M0280120D

MOSFET SIC MOSFET 1200V RDS ON 280 mOhm

Part Number: C2M0280120D

Manufacturer: Cree, Inc.


Pricing & Availability
Manufactured By: Cree, Inc.
Manufacturer Part Number: C2M0280120D
Manufacturer
Cree, Inc.
Product Category
MOSFET
Id - Continuous Drain Current
10 A
Vds - Drain-Source Breakdown Voltage
1200 V
Rds On - Drain-Source Resistance
280 mOhms
Transistor Polarity
N-Channel
Vgs - Gate-Source Breakdown Voltage
- 10 V to + 25 V
Vgs th - Gate-Source Threshold Voltage
2.8 V
Qg - Gate Charge
5.6 nC
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
62.5 W
Mounting Style
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Brand
Cree, Inc.
Channel Mode
Enhancement
Ciss - Input Capacitance
259 pF
Configuration
Single
Fall Time
9.9 ns
Forward Transconductance - Min
2.8 S
Minimum Operating Temperature
- 55 C
Rise Time
7.6 ns
Technology
SiC
Tradename
Z-FET
Typical Turn-Off Delay Time
10.8 ns